Non-volatile ferroelectric control of room-temperature electrical transport in perovskite oxide semiconductor La:BaSnO3
Non-volatile ferroelectric control of room-temperature electrical transport in perovskite oxide semiconductor La:BaSnO3
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DOI：
10.1039/c7tc03730a
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发表时间：
2017-11
影响因子：
6.4
通讯作者：
S. Heo;Daseob Yoon;S. Yu;Junwoo Son;H. Jang
中科院分区：
文献类型：
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作者：
S. Heo;Daseob Yoon;S. Yu;Junwoo Son;H. Jang
由氧化物半导体薄膜和铁电单晶组成的复合氧化物异质结构由于铁电体的极化反转可电切换沟道电阻而引起了人们的极大兴趣。在这里，我们实现了可逆的和非挥发性的调制室温（RT）电阻在外延La掺杂BaSnO 3（LBSO）透明氧化物层，利用（001）取向的Pb（Mg 1/3 Nb 2/3）O3-PbTiO 3（PMN-PT）单晶衬底的铁电场效应。利用“全钙钛矿”异质结构，LBSO薄膜的方阻可以在极化切换时可逆地改变;结果，非挥发性薄层电阻在室温下被调制高达70%。这种将具有不同功能的联合收割机材料结合的异质结构提供了对钙钛矿锡酸盐体系的电荷介导物理学与铁电极化耦合的科学见解，并显示出基于新型透明氧化物半导体的非易失性电子器件的技术潜力。
Complex oxide heterostructures composed of oxide semiconductor thin films and ferroelectric single crystals have attracted substantial interest due to the electrically switchable channel resistance by the polarization reversal of ferroelectrics. Here we achieve reversible and non-volatile modulation of room-temperature (RT) resistance in epitaxial La-doped BaSnO3 (LBSO) transparent oxide layers by exploiting the ferroelectric field effect of (001)-oriented Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) single-crystal substrates. Using “all-perovskite” heterostructures, the sheet resistance of the LBSO thin films could be reversibly modified upon polarization switching; as a result, the non-volatile sheet resistance was modulated by up to ∼70% at RT. Such heterostructures that combine materials with dissimilar functionality provide scientific insights into the charge-mediated physics of perovskite stannate systems coupled to ferroelectric polarization, and show technological potential for non-volatile electronic devices based on new transparent oxide semiconductors.