Density-Controlled Homoepitaxial Growth of ZnS Nanowire Arrays
Density-Controlled Homoepitaxial Growth of ZnS Nanowire Arrays
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DOI：
10.1021/jp809954v
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发表时间：
2009-02
影响因子：
3.7
通讯作者：
Min Wang;G. Fei;X. Zhu;Bing Wu;M. Kong;Lide Zhang
中科院分区：
文献类型：
--
作者：
Min Wang;G. Fei;X. Zhu;Bing Wu;M. Kong;Lide Zhang
在本文中，单晶ZnS柱阵列的制备上的ZnS晶片。然后利用ZnS柱阵列作为过渡层，实现ZnS纳米线阵列的大规模同质外延生长。通过在不同温度下退火涂覆有Au膜的ZnS柱，控制Au颗粒密度，并且通过气-液-固工艺控制ZnS纳米线密度在0.33至3.04线/μm2范围内。该方法具有通用性，可以方便地应用于其他材料的纳米线阵列的同质外延生长和纳米线密度的调节。
In this paper, single-crystal ZnS column arrays are prepared on the ZnS wafer. The ZnS column arrays are then utilized as a transition layer to achieve large-scale homoepitaxial growth of ZnS nanowire arrays. Through annealing ZnS columns coated with Au films at different temperatures, the Au particle density is controlled, and the ZnS nanowire density is controlled via a vapor−liquid−solid process ranging from 0.33 to 3.04 wires/μm2. This universal method can be easily applied to homoepitaxially grow nanowire arrays of other materials and tune the nanowire density.