Modeling and analysis for thermal management in gallium oxide field-effect transistors
Modeling and analysis for thermal management in gallium oxide field-effect transistors
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DOI：
10.1063/1.5141332
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发表时间：
2020-04-21
影响因子：
3.2
通讯作者：
Graham, Samuel
中科院分区：
文献类型：
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作者：
Yuan, Chao;Zhang, Yuewei;Graham, Samuel
由于β-Ga 2 O3器件的大热阻，其热管理受到越来越多的关注，大热阻部分是由于其低的固有热导率而出现的。存在可用于热管理的许多管芯级热管理方法。但是，尚未专门针对β-Ga 2 O3器械对其进行评估。在这里，我们探讨了各种芯片级热管理计划的限制β-Ga 2 O3金属半导体场效应晶体管使用数值模拟。全面研究了各种冷却方法对器件通道温度的影响，沿着了材料选择指南，以实现最有效的热解决方案。在各种冷却策略中，双面冷却与器件有源区中使用的散热器相结合，可以将器件热阻抑制到低至11 mm摄氏度/W，在200摄氏度的结温限制下，实现高达16 W/mm的最大耗散功率密度。还开发了多指晶体管热模型，以评估β-Ga 2 O3器件用于更高输出功率应用的潜力。总的来说，这个数值研究表明，有可能实现高功率β-Ga 2 O3器件操作与适当的管芯级热管理解决方案。
Increased attention has been paid to the thermal management of beta -Ga2O3 devices as a result of the large thermal resistance that can present itself in part due to its low intrinsic thermal conductivity. A number of die-level thermal management approaches exist that could be viable for thermal management. However, they have not been assessed for beta -Ga2O3 devices exclusively. Here, we explore the limits of various die level thermal management schemes on a beta -Ga2O3 metal-semiconductor field-effect transistor using numerical simulations. The effects of the various cooling approaches on the device channel temperature were comprehensively investigated, along with guidance for material selection to enable the most effective thermal solutions. Among various cooling strategies, double side cooling combined with a heat spreader used in the active region of the device can suppress the device thermal resistance to as low as 11mm degrees C/W, achieving a maximum dissipated power density as high as 16W/mm for a junction temperature limit of 200 degrees C. A multi-finger transistor thermal model was also developed to assess the potential of beta -Ga2O3 devices for higher output power applications. Overall, this numerical study shows that it is possible to achieve high power beta -Ga2O3 device operation with appropriate die-level thermal management solutions.