Orientation controlling of Pb(Zr0.53Ti0.47)O3 thin films prepared on silicon substrates with the thickness of La0.5Sr0.5CoO3 electrodes
Orientation controlling of Pb(Zr0.53Ti0.47)O3 thin films prepared on silicon substrates with the thickness of La0.5Sr0.5CoO3 electrodes
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DOI：
10.1007/s10854-009-9948-6
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发表时间：
2010-05
期刊：
影响因子：
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通讯作者：
Feng Chen;Jinrong Cheng;Shenwen Yu;Z. Meng
中科院分区：
文献类型：
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作者：
Feng Chen;Jinrong Cheng;Shenwen Yu;Z. Meng
采用溶胶-凝胶法在La0.5Sr0.5CoO3（LSCO）涂层Si衬底上制备了Pb（Zr0.53Ti0.47）O3（PZT）薄膜。LSCO电极的厚度可以改变PZT薄膜的择优取向，从而影响其介电和铁电性能。(100)在（110）织构的LSCO上可以得到厚度为230 nm的具有致密柱状结构的织构PZT薄膜。在优化后的LSCO薄膜上制备的PZT薄膜的介电常数和剩余极化分别达到980和20 μC/cm 2。
Pb(Zr0.53Ti0.47)O3(PZT) thin films were prepared on La0.5Sr0.5CoO3(LSCO) coated Si substrates by a sol–gel route. The thickness of LSCO electrode was found to modify the preferential orientation of PZT thin films, which consequently affected the dielectric and ferroelectric properties. (100) textured PZT films with dense columnar structure could be obtained on the top of (110) textured LSCO with thickness of 230 nm. PZT thin films prepared on the optimized LSCO films exhibit the enhanced dielectric constant and remnant polarization of 980 and 20 μC/cm2, respectively.