Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode
Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode
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DOI：
10.1016/j.elecom.2008.10.031
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发表时间：
2009-01-01
影响因子：
5.4
通讯作者：
Liu, Wen-Chau
中科院分区：
文献类型：
--
作者：
Chang, Chung-Fu;Tsai, Tsung-Han;Liu, Wen-Chau
通过在金属/半导体（MS）界面上沉积SiO2，改善了Pd/AlGaN基肖特基二极管的氢敏特性。MOS二极管的肖特基势垒高度变化很大，这是由于SiO2层上的电场很大。这导致存在由极化效应引起的更多氢偶极子。MOS二极管在室温下的感测响应（1.3 x 10（5））与MS二极管在150 ℃下的感测响应（2.04 x 10（5））相当。因此，MOS型感测装置显示出低温操作的益处。动力学分析证实，MOS二极管的短响应时间归因于Pd/SiO2界面处的高反应速率。(C)2008 Elsevier B. V.保留所有权利。
Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition Of SiO2 at the metal/semi conductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 x 10(5)) is comparable to that of the MS one at 150 degrees C (2.04 x 10(5)). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO2, interface. (C) 2008 Elsevier B.V. All rights reserved.