Intrinsically stretchable field-effect transistors
Intrinsically stretchable field-effect transistors
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DOI：
10.1557/mrs.2016.326
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发表时间：
2017-02
期刊：
影响因子：
5
通讯作者：
Jiajie Liang;Kwing Tong;H. Sun;Q. Pei
中科院分区：
文献类型：
--
作者：
Jiajie Liang;Kwing Tong;H. Sun;Q. Pei
薄膜场效应晶体管（TFT）是一种三端器件，包括源极、漏极和栅极、介电层、半导体层和衬底。TFT是各种电子器件的基本组成部分。开发一种内在可拉伸的TFT需要一种具有弹性变形能力的功能材料的可用性和使用，以响应外部施加的应力。这代表了一个主要的材料挑战。在本文中，我们研究了合成这些弹性功能材料的策略，以及如何组装这些材料来制造本质上可拉伸的TFT器件。开发基于解决方案的印刷技术来组装内在可拉伸的tft被认为是可穿戴电子产品在不久的将来用于工业适应的前瞻性策略。
A thin-film field-effect transistor (TFT) is a three-terminal device comprising source, drain, and gate electrodes, a dielectric layer, a semiconductor layer, and a substrate. The TFT is a fundamental building component in a variety of electronic devices. Developing an intrinsically stretchable TFT entails availability and usage of a functional material with elastomeric deformability in response to an externally applied stress. This represents a major materials challenge. In this article, we survey strategies to synthesize these elastomeric functional materials, and how these materials are assembled to fabricate intrinsically stretchable TFT devices. Developing solution-based printing technology to assemble intrinsically stretchable TFTs is considered a prospective strategy for wearable electronics for industrial adaptation in the near future.