On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation
On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation
复制标题
硅表面钝化用SiO2/SiNx介质双层中电荷的位置和稳定性
DOI：
10.1063/1.4871075
复制
发表时间：
2014
影响因子：
3.2
通讯作者：
P. Wilshaw
中科院分区：
文献类型：
--
作者：
R. S. Bonilla;C. Reichel;M. Hermle;P. Wilshaw
热二氧化硅-化学气相沉积（CVD）氮化硅的介电双层被发现通过结合表面缺陷态的化学还原与表面处的载流子的场效应还原（由于在衬底中的电荷）来产生硅表面的优异钝化。这种双层中存在的电荷以前被认为是两者之间界面的特征。然而，实验证据表明，这是间接的和不确定的。该手稿报告了直接测量，显示电荷位于热二氧化硅-等离子体CVD氮化硅的钝化双层之间的界面的10 nm内。此外，使用优化条件沉积的氧化物-氮化物层的钝化效率被发现在很大程度上不受随后添加到膜中的额外电荷的影响。织构化表面或使用非优化的沉积条件产生的钝化效率被发现是高度d…
Dielectric double layers of thermal silicon dioxide–chemical vapour deposition (CVD) silicon nitride are found to produce excellent passivation of silicon surfaces by combining a chemical reduction of surface defect states, with a field effect reduction of carriers at the surface due to charge in the dielectrics. The charge present in such double-layers has previously been attributed to be characteristic of the interface between the two. However, experimental evidence shows this is indirect and inconclusive. This manuscript reports direct measurements that show the charge lies within 10 nm of the interface between passivating double layers of thermal silicon dioxide–plasma CVD silicon nitride. In addition, the passivation efficiency of oxide-nitride layers, deposited using optimised conditions, was found to be largely unaffected by extra charge subsequently added to the film. The passivation efficiency of textured surfaces or those produced using non-optimised deposition conditions is found to be highly d...