High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
复制标题
绝缘体上硅纳米线晶体管热电子电荷传输的高频表征
DOI：
10.1063/1.4863538
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发表时间：
2014
影响因子：
4
通讯作者：
M. Gonzalez
中科院分区：
文献类型：
--
作者：
A. Betz;S. Barraud;Q. Wilmart;B. Plaçais;X. Jehl;M. Sanquer;M. Gonzalez
我们报告在低温和室温下绝缘体上硅纳米晶体管的直流和微波电输运测量。在低源漏电压下，直流电流和射频响应表现出电导量子化的迹象。我们把这归因于库仑阻塞造成的障碍，形成在间隔栅接口。我们表明，在高偏压下发生的最高势垒的跨导传输：跨导轨迹从微波散射参数测量在液氦和室温下准确地拟合的跨导模型。从拟合我们推出的栅极电容和量子电容的比例，以及电子温度。
We report on DC and microwave electrical transport measurements in silicon-on-insulator nano-transistors at low and room temperature. At low source-drain voltage, the DC current and radio frequency response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature are accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.