Properties of Dy3+‐Doped Ge–As–Ga–Se Chalcogenide Glasses

Properties of Dy3+‐Doped Ge–As–Ga–Se Chalcogenide Glasses
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DOI:
10.1111/j.1551-2916.2006.01070.x
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发表时间:
2006-08
影响因子:
3.9
通讯作者:
Ren Jing;Yang Guang;Zeng Hui-dan;Zhang Xianghua;Y. Yunxia;C. Guorong
Ren Jing;Yang Guang;Zeng Hui-dan;Zhang Xianghua;Y. Yunxia;C. Guorong
中科院分区:
材料科学2区
文献类型:
--
作者:
Ren Jing;Yang Guang;Zeng Hui-dan;Zhang Xianghua;Y. Yunxia;C. Guorong

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在本工作中,作为与先前研究的Ge-Ga-Se系统的比较,研究了化学计量式为(0.9-x)GeSe2-xAsSe3/2 - 0.1GaSe3/2(x = 0.1,0.2,0.3,0.4,0.5,0.6)的Dy3+掺杂硫系玻璃的性质。性能测量包括差热分析、密度、可见-近红外和红外透射光谱以及荧光发射光谱。Judd-Ofelt分析使用计算的玻璃振子强度进行。玻璃的各项性能都表现出明显的成分依赖性。特别是随着As含量的增加,样品的抗失透性增强,1.34 μ m荧光寿命延长。值得注意的是,在平均配位数与二维-三维拓扑相变阈值相对应的玻璃中,某些性质发生了异常变化。
In the present work, properties of Dy3+-doped chalcogenide glasses as a stoichiometric formula of (0.9−x)GeSe2–xAsSe3/2–0.1GaSe3/2 (x=0.1, 0.2, 0.3, 0.4, 0.5, 0.6) were investigated as a comparison with the previously studied Ge–Ga–Se system. Property measurements include differential thermal analysis, density, Vis-NIR and IR transmission spectra, and fluorescent emission spectra. Judd–Ofelt analysis was performed using the calculated oscillator strengths of glasses. All properties of glasses show obvious dependence on compositions. Especially, the improved devitrification resistance and the longer fluorescence life at 1.34 μm emission were observed with the increasing As content. Noticeably, abnormal changes in some properties occurred to the glass whose average coordination number corresponds to the threshold of two-dimensional–three-dimensional topological phase transition.