Effect of deposition and annealing temperature on mechanical properties of TaN film
Effect of deposition and annealing temperature on mechanical properties of TaN film
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DOI：
10.1016/j.apsusc.2011.08.116
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发表时间：
2011-11
影响因子：
6.7
通讯作者：
Liu Xing;Guojia Ma;Guosheng Sun;Yuping Duan;Shun-hua Liu
中科院分区：
文献类型：
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作者：
Liu Xing;Guojia Ma;Guosheng Sun;Yuping Duan;Shun-hua Liu
采用微波ECR-DC溅射法制备了氮化钽薄膜。研究了沉积温度和退火温度对TaN薄膜力学性能的影响。采用扫描电子显微镜（SEM）、x射线衍射仪（XRD）和x射线光电子能谱（XPS）对膜的横截面形貌、微观结构和结合能进行了研究。采用纳米压痕和划痕试验对其力学性能进行了评价。结果表明，在573K时，TaN试样的最大硬度值约为40GPa。随着制备温度的降低，TaN膜的硬度、模量和附着力也随之降低。硬度和模量也随退火温度的升高而降低。同时，结合强度对退火温度也很敏感，在448K退火时测得的最大结合强度为40N。结果表明，通过控制沉积温度和退火温度，可以获得良好的力学性能。
Tantalum nitride films (TaN) were synthesized by microwave ECR-DC sputtering. The effects of deposition and annealing temperature on mechanical properties of TaN films were investigated. Cross-section pattern, microstructure and binding energy of the films were investigated by scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Mechanical properties were evaluated using nano-indentation and scratch tester. The results showed that the maximal hardness value of approximately 40GPa was deposited in the TaN sample at 573K. While the preparation temperature decreased, the hardness, modulus and adhesion of TaN film also decreased. Hardness and modulus also decreased with the increase in annealing temperature. Meanwhile the adhesion strength was also sensitive to the annealing temperature, with a maximum adhesion strength of 40N measured in the TaN film annealed at 448K. The results demonstrated that a desirable mechanical property of TaN films deposited by DC reactive magnetron sputtering can be obtained by controlling the deposition and annealing temperature.