Degradation of a gallium-arsenide photoemitting NEA surface by water vapour
Degradation of a gallium-arsenide photoemitting NEA surface by water vapour
复制标题
DOI:
10.1016/s0169-4332(99)00085-9
复制
发表时间:
1999-04-01
影响因子:
6.7
通讯作者:
Westermann, M
中科院分区:
文献类型:
--
作者:
Durek, D;Frommberger, F;Westermann, M
The influence of water vapour on the photoemissivity of GaAs crystals has been measured. Water vapour belongs to the gases with strong poisoning effects; even small amounts of water below the detection limit of conventional RGA systems reduce the practical lifetime of a GaAs photocathode. (C) 1999 Elsevier Science B.V. All rights reserved.