PHOTOELECTRONIC PROPERTIES OF RES2 AND RESE2 SINGLE-CRYSTALS
PHOTOELECTRONIC PROPERTIES OF RES2 AND RESE2 SINGLE-CRYSTALS
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DOI：
10.1016/0022-4596(84)90330-x
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发表时间：
1984-01-01
影响因子：
3.3
通讯作者：
WOLD, A
中科院分区：
文献类型：
--
作者：
MARZIK, JV;KERSHAW, R;WOLD, A
用化学气相传输法生长了ReS_2和ReSe_2的大单晶，并对其性质进行了研究。发现两者都是ben型半导体，电阻率在1-10 ohm-cm范围内。在I −3/I−的水溶液中进行光电化学测量，得到了高的光电流密度，ReSe 2是更有效的光电极。对它们的光学吸收光谱的分析表明，ReS 2和ReSe 2的最低能量间接光学带隙分别为1.32（5）eV和1.17（5）eV。光电化学光谱响应测量导致测量的最低能量的间接光学带隙为1.4 eV的ReS 2，这是在密切的协议，从光学吸收测量。
Large single crystals of ReS2and ReSe2were grown by chemical vapor transport and several of their properties were investigated. Both were found to ben-type semiconductors with resistivities in the range of 1–10 ohm-cm. Photoelectrochemical measurements in aqueous solutions ofI−3/I−resulted in high photocurrent densities, with ReSe2being the more efficient photoelectrode. Analysis of their optical absorption spectra resulted in lowest-energy indirect optical band gaps of 1.32(5) eV for ReS2and 1.17(5) eV for ReSe2. Photoelectrochemical spectral response measurements resulted in a measured lowest-energy indirect optical band gap of 1.4 eV for ReS2, which is in close agreement with that measured from optical absorption.