Effect of high-temperature/current stress on the forward tunneling current of InGaN/GaN high-power blue-light-emitting diodes
Effect of high-temperature/current stress on the forward tunneling current of InGaN/GaN high-power blue-light-emitting diodes
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DOI：
10.7567/jjap.56.081001
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发表时间：
2017-08-01
影响因子：
1.5
通讯作者：
Zhou, Shengjun
中科院分区：
文献类型：
--
作者：
Liu, Sheng;Zheng, Chenju;Zhou, Shengjun
通过对所制备的InGaN/GaN大功率蓝光发光二极管（LED）的温度依赖性电流-电压（I-V）特性的分析，证实了低偏压区主要由隧穿电流控制，而中偏压区主要由扩散复合电流控制。电子和重空穴似乎在所制造的LED的隧穿电流中扮演类似的角色，没有明显的主导隧穿实体由先前的工作建议的特征能量确定。经过1000 h的高温/电流应力作用后，LED的I-V曲线中偏置区几乎没有变化，而低偏置区的电流则被应力大大增强，这证实了低、中偏置区载流子输运机制的不同行为。进一步比较未受应力和受应力LED的I-V特性表明，I-V曲线的变化与InGaN/GaN多量子阱（MQW）有源区中缺陷密度和表观掺杂浓度的增加有关。(C)2017日本应用物理学会
Through the analysis of the temperature-dependent current-voltage (I-V) characteristics of the fabricated InGaN/GaN high-power blue-light-emitting diodes (LEDs), the low-bias region was confirmed to be dominated by tunneling current, while the medium-bias region was dominated by diffusion-recombination current. Electrons and heavy holes appeared to play similar roles in the tunneling current of the fabricated LEDs, with no apparent dominant tunneling entity determined by characteristic energy as previous works suggested. After 1000h of high-temperature/current stress, the medium-bias regions of the I-V curves of LEDs remained almost unchanged, while the current in the low-bias region was greatly enhanced by the stress, which confirmed the different carrier transport mechanism behaviors in the low- and medium-bias regions. Further comparison between the I-V characteristics of the unstressed and stressed LEDs suggested that the change in I-V curve was associated with the increase in defect density and the apparent doping concentration in the InGaN/GaN multiple-quantum-well (MQW) active region. (C) 2017 The Japan Society of Applied Physics