Ballistic nanodevices for terahertz data processing:: Monte Carlo simulations
Ballistic nanodevices for terahertz data processing:: Monte Carlo simulations
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DOI：
10.1088/0957-4484/14/2/303
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发表时间：
2003-02-01
期刊：
影响因子：
3.5
通讯作者：
Cappy, A
中科院分区：
文献类型：
--
作者：
Mateos, J;Vasallo, BG;Cappy, A
采用半经典的二维蒙特卡罗模拟方法，分析了基于AlInAs/InGaAs弹道沟道的简单器件(T形分支结和整流二极管)。通过对长(扩散)沟道中电子迁移率和电子浓度的霍尔效应测量，初步验证了模型的有效性。然后，在100 nm通道中证实了室温下的准弹道输运。我们的模拟定性地再现了作为电子弹道输运的结果以及与结构内部空间电荷的存在密切相关的在TBJ中测量的电势的实验结果。作为利用电子弹道输运的器件的例子，给出了多路复用器/多路分用器和整流二极管的初步模拟，展示了它们的太赫兹工作能力。
By using a semi-classical two-dimensional Monte Carlo simulation, simple devices (T-branch junctions (TBJs) and rectifying diodes) based on AlInAs/InGaAs ballistic channels are analysed. Initially, the model is validated by means of Hall-effect measurements of mobility and electron concentration in long (diffusive) channels. Then, quasi-ballistic transport at room temperature is confirmed in a 100 nm channel. Our simulations qualitatively reproduce the experimental results of electric potential measured in a TBJ appearing as a result of electron ballistic transport, and in close relation with the presence of space charge inside the structure. As examples of devices exploiting the ballistic transport of electrons, preliminary simulations of a multiplexor/demultiplexor and a rectifying diode are presented, demonstrating their capability for terahertz operation.