Enhanced Current Collection in 1.7 eV GaInAsP Solar Cells Grown on GaAs by Metalorganic Vapor Phase Epitaxy
Enhanced Current Collection in 1.7 eV GaInAsP Solar Cells Grown on GaAs by Metalorganic Vapor Phase Epitaxy
复制标题
通过金属有机气相外延在 GaAs 上生长的 1.7 eV GaInAsP 太阳能电池增强电流收集
DOI：
--
复制
发表时间：
2017
影响因子：
3
通讯作者：
M. Steiner
中科院分区：
文献类型：
--
作者：
N. Jain;J. Geisz;R. France;A. Norman;M. Steiner
四元GaInAsP太阳能电池的带隙为1.7 eV，提供了一个有吸引力的铝GaAs太阳能电池的替代品，集成在下一代的III-V多结太阳能电池与五个或更多的结。对于III-V/Si叠层太阳能电池，也高度寻求开发高质量的1.7eV太阳能电池。在这项工作中，我们系统地研究了不同的基础厚度和掺杂浓度对载流子收集和性能的1.7 eV的GaInAsP太阳能电池的影响。发现这些电池的光响应对基极层中的p型锌掺杂浓度非常敏感。原型1.7 eV的GaInAsP n-i-p太阳能电池设计表明，利用增强的耗尽宽度作为一种有效的方法，以实现超过90%的峰值量子效率。我们还显示了最佳的i层厚度的重要性，作为一个关键参数，以减少下降的填充因子（FF）由于现场辅助收集。此外，我们证明了当GaInAsP基层在650 °C而不是600 °C下生长时，电池性能的显著改善。最佳的GaInAsP太阳电池（<italic><sub>Eg</sub></italic>= 1.65eV）在AM1.5D谱下的<sub>JSC</sub>为21.1mA/cm<sup>2</sup>，<sub>VOC</sub><italic></italic><italic></italic>这些结果突出了无Al GaInAsP太阳能电池在下一代III-V多结太阳能电池中集成的潜力。
Quaternary GaInAsP solar cells with a bandgap of ∼1.7 eV offer an attractive Al-free alternative to AlGaAs solar cells for integration in next generation of III–V multijunction solar cells with five or more junctions. Development of a high quality 1.7 eV solar cell is also highly sought for III–V/Si tandem solar cells. In this work, we systematically investigate the impact of varying base thicknesses and doping concentrations on the carrier collection and performance of 1.7 eV GaInAsP solar cells. The photoresponse of these cells is found to be very sensitive to p-type zinc doping concentration in the base layer. Prototype 1.7 eV GaInAsP n-i-p solar cell designs are demonstrated that leverage enhanced depletion width as an effective method to achieve peak quantum efficiency exceeding 90%. We also show the importance of optimal i-layer thickness as a critical parameter to reduce the drop in fill-factor (FF) due to field-aided collection. Furthermore, we demonstrate substantial improvement in the cell performance when the GaInAsP base layer is grown at 650 °C instead of 600 °C. The best GaInAsP solar cell (<italic>E<sub>g</sub></italic> ∼ 1.65 eV) in this study achieved <italic>J</italic><sub>SC</sub> of 21.1 mA/cm<sup>2</sup>, <italic>V</italic><sub>OC</sub> of 1.18 V, FF of 83.8%, and an efficiency of 20.8 ± 1% under AM1.5D spectrum (21.5 ± 1% under AM1.5G spectrum). These results highlight the potential of Al-free GaInAsP solar cells for integration in the next generation of III–V multijunction solar cells.