Scaling law of the giant Stark effect in boron nitride nanoribbons and nanotubes
Scaling law of the giant Stark effect in boron nitride nanoribbons and nanotubes
复制标题
氮化硼纳米带和纳米管中巨斯塔克效应的标度定律
DOI：
10.1103/physrevb.78.085423
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发表时间：
2008-08-01
影响因子：
3.7
通讯作者：
Gu, Bing-Lin
中科院分区：
文献类型：
--
作者：
Zheng, Fawei;Liu, Zhirong;Gu, Bing-Lin
从头计算揭示了横向电场如何改变氮化硼（BN）纳米带和纳米管的电子结构的普遍标度律。由于结构对称性的差异，锯齿形BN带的能隙可以根据电场的符号而减小或增大，而扶手椅形BN带的能隙总是减小。然而，锯齿形和扶手椅型BN纳米带的线性巨斯塔克效应系数，以及BN纳米管的线性巨斯塔克效应系数，被发现服从一个统一的标度律，其中系数随带宽度或管直径线性增加，斜率为1.0。标度律的机制是确定使用一个通用的模型，这可能是适用于其他半导体纳米结构。
Ab initio calculations reveal a universal scaling law on how the electronic structure of boron nitride (BN) nanoribbons and nanotubes is modified by a transverse electric field. Due to the structural symmetry difference, the energy gap of zigzag BN ribbons can be reduced or increased by the electric field depending on the sign of the field, while that of the armchair ones is always reduced. However, the linear giant Stark effect coefficients of zigzag and armchair BN nanoribbons, as well as those of BN nanotubes, are found to obey a unified scaling law where the coefficient increases linearly with the ribbon width or the tube diameter with a slope of 1.0. The mechanism of the scaling law is identified using a general model, which may be applicable to other semiconducting nanostructures.