The effect of carbon doping on the upper critical field (Hc2) and resistivity of MgB2 by using sucrose (C12H22O11) as the carbon source
The effect of carbon doping on the upper critical field (Hc2) and resistivity of MgB2 by using sucrose (C12H22O11) as the carbon source
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DOI：
10.1088/0953-2048/22/1/015025
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发表时间：
2008
影响因子：
3.6
通讯作者：
Yun Zhang;Sihai Zhou;Cheng Lu;K. Konstantinov;S. Dou
中科院分区：
文献类型：
--
作者：
Yun Zhang;Sihai Zhou;Cheng Lu;K. Konstantinov;S. Dou
在这项工作中，蔗糖被掺杂到 MgB2 样品中作为碳源。烧结温度为 850 至 1050 °C。详细研究了蔗糖掺杂和烧结温度对晶格参数、微应变、临界温度（Tc）、电阻率和上临界场（Hc2）的影响。研究发现，蔗糖掺杂导致Tc降低小，电阻率高，同时Hc2性能得到改善。在 850 °C 下烧结的蔗糖掺杂样品显示出最佳性能。 Hc2 增强的原因可能是由于 C 取代 B 和/或 C 原子作为间隙原子在 MgB2 晶格中扩散而引起的无序。
In this work, sucrose was doped into MgB2 samples to act as a carbon source. The sintering temperature varied from 850 to 1050 °C. The effects of sucrose doping and sintering temperature on the lattice parameters, microstrain, critical temperature (Tc), resistivity, and upper critical field (Hc2) have been investigated in detail. It has been found that sucrose doping results in a small depression in Tc and high resistivity, while the Hc2 performance is improved. The best performance was shown in the sucrose-doped sample sintered at 850 °C. The reason for the enhancement of Hc2 is likely to be disorder caused by C substitution for B and/or diffusion of C atoms in the MgB2 lattice as interstitial atoms.