Insulating phase of a two-dimensional electron gas in Mg x Zn 1-x O/ZnO heterostructures below ν=(1)/(3)
Insulating phase of a two-dimensional electron gas in Mg x Zn 1-x O/ZnO heterostructures below ν=(1)/(3)
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低于 ν=(1)/(3) 的 Mg x Zn 1-x O/ZnO 异质结构中二维电子气的绝缘相
DOI：
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发表时间：
2011
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通讯作者：
M. Kawasaki
中科院分区：
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作者：
Y. Kozuka;A. Tsukazaki;D. Maryenko;J. Falson;S. Akasaka;K. Nakahara;S. Nakamura;S. Awaji;K. Ueno;M. Kawasaki
本文报道了MgZnO/ZnO异质界面二维电子气在26 T强磁场下的磁输运性质。高电子迁移率和低载流子密度使得能够观察到分数量子霍尔态ν = 1/3。对于更低的载流子密度，我们观察到从量子霍尔液体的填充因子1/3以下的绝缘体的过渡。由于ZnO中的大电子有效质量，我们建议MgZnO/ZnO异质结构是一个原型系统的高度相关的量子霍尔物理。
We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall state ν = 1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling factor 1/3. Because of the large electron effective mass in ZnO, we suggest the MgZnO/ZnO heterostructures to be a prototype system for highly correlated quantum Hall physics.