Influence of hot phonons on energy relaxation of high-density carriers in germanium
Influence of hot phonons on energy relaxation of high-density carriers in germanium
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DOI：
10.1103/physrevb.19.5928
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发表时间：
1979-06
影响因子：
3.7
通讯作者：
V. Driel
中科院分区：
文献类型：
--
作者：
V. Driel
最近对锗的实验表明，由强光皮秒脉冲产生的密集电子-空穴等离子体的能量弛豫时间非常长。由于主要通过光学声子发射的载体放松，它建议在这里，长的平衡时间是由于建立的皮秒时间尺度上的光学声子人口所产生的松弛瓶颈。理论和实验的比较给出了很好的协议。
Recent experiments on germanium have indicated anomalously long energy relaxation times for dense electron-hole plasmas produced by intense optical picosecond pulses. Since the carriers relax primarily through optical-phonon emission it is suggested here that the long equilibration time is due to a relaxation bottleneck produced by a buildup of the optical-phonon population on a picosecond time scale. A comparison of theory and experiment gives excellent agreement.