DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES
DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES
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DOI：
10.1103/physrevb.28.7014
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发表时间：
1983-01-01
影响因子：
3.7
通讯作者：
POLLAK, RA
中科院分区：
文献类型：
--
作者：
HIMPSEL, FJ;HOLLINGER, G;POLLAK, RA
通过精确测量Si 2 p芯能级相对于费米能级的位置，确定了费米能级相对于价带顶的位置。作为参考，我们使用p掺杂的样品与Ga覆盖层和n掺杂的样品与Cs+ O覆盖层，其中EF被钉扎附近的价带最大值和导带最小值，分别。我们得到低台阶密度解理Si（111）-（2× 1）的EF-EV = 0.40±0.03 eV，退火Si（111）-（7× 7）的EF-EV = 0.63±0.05 eV。阶梯状解理表面的特征是EF − EV = 0.46 eV，并表现出更大的表面核心能级位移和悬挂键态向较低结合能的位移。
The position of the Fermi level E F relative to the valence-band maximum E V has been determined from accurate measurements of the Si 2 p core-level position relative to E F. As a reference, we use p-doped samples with a Ga overlayer and n-doped samples with a Cs+ O overlayer where E F is pinned near the valence-band maximum and conduction-band minimum, respectively. We obtain E F− E V= 0.40±0.03 eV for low-step-density cleaved Si (111)-(2× 1) and E F− E V= 0.63±0.05 eV for annealed Si (111)-(7× 7). Stepped cleavage surfaces are characterized by E F− E V= 0.46 eV and exhibit larger surface core-level shifts and a shift of the dangling-bond states towards lower binding energy.