Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.
Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.
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DOI：
10.1186/s11671-018-2539-9
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发表时间：
2018-04-24
影响因子：
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通讯作者：
Kuo HC
中科院分区：
文献类型：
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作者：
Zhang ZH;Huang Chen SW;Chu C;Tian K;Fang M;Zhang Y;Bi W;Kuo HC
这项工作报告了一种几乎无效率下降的基于 AlGaN 的深紫外发光二极管 (DUV LED)，其发射峰值波长为 270 nm。 DUV LED 采用专门设计的超晶格 p 型电子阻挡层 (p-EBL)。超晶格 p-EBL 能够在 p-EBL 中实现高空穴浓度，从而相应地提高空穴注入多量子阱 (MQW) 的效率。 MQW 区域内增强的空穴浓度可以更有效地与电子复合，从而有利于辐射复合，从而降低电子泄漏电流水平。结果，所提出的 DUV LED 结构的外量子效率提高了 100%，并且通过实验获得了几乎无效率下降的 DUV LED 结构。
This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.