Hall mobility of electrons in quantized accumulation layers on ZnO surfaces
Hall mobility of electrons in quantized accumulation layers on ZnO surfaces
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ZnO 表面量子化积累层中电子的霍尔迁移率
DOI：
10.1103/physrevb.19.1098
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发表时间：
1979
影响因子：
3.7
通讯作者：
Y. Goldstein
中科院分区：
文献类型：
--
作者：
Y. Grinshpan;M. Nitzan;Y. Goldstein
在极端堆积层条件下，对ZnO单晶（$000\overline{1}$）表面进行了霍尔效应测量，表面电子密度范围为\ensuremath{\sim}${10}^{12}$至\ensuremath{\sim}${10}^{14}$${\mathrm{cm}}^{\ensuremath{-}2}$。在2-300 K的温度范围内，测量结果是表面电子密度和温度的函数。发现在整个温度范围内，堆积层中的电子密度基本上与温度无关。另一方面，电子迁移率与温度有关，表面电子密度高达\ensuremath{\sim}${10}^{13}$${\mathrm{cm}}^{\ensuremath{-}2}$，随着温度的降低而降低，在低温时发生载流子局部化。作为表面电子密度的函数（在固定温度下），迁移率先增加，达到最大值，然后缓慢下降。结果表明，散射和/或局部化是由带电散射中心引起的，这些中心明显聚集成大簇。
Hall-effect measurements were performed on the ($000\overline{1}$) face of ZnO single crystals under extreme accumulation layer conditions with surface electron densities ranging from \ensuremath{\sim}${10}^{12}$ up to \ensuremath{\sim}${10}^{14}$ ${\mathrm{cm}}^{\ensuremath{-}2}$. The measurements were performed as a function of the surface-electron density and temperatures in the temperature range of 2-300 K. The electron density in the accumulation layer was found to be essentially temperature independent over the whole temperature range. The electron mobility, on the other hand, is temperature dependent for surface-electron densities up to \ensuremath{\sim}${10}^{13}$ ${\mathrm{cm}}^{\ensuremath{-}2}$, decreases with decreasing temperatures and at low temperatures carrier localization occurs. As a function of the surface-electron density (at a fixed temperature) the mobility initially increases, reaches a maximum, and then slowly decreases. The results suggest scattering and/or localization by charged scattering centers which apparently conglomerate into large clusters.