Nanoscale Lithography on Mono layer Graphene Using Hydrogenation and Oxidation
Nanoscale Lithography on Mono layer Graphene Using Hydrogenation and Oxidation
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DOI：
10.1021/nn201601m
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发表时间：
2011-08-01
期刊：
影响因子：
17.1
通讯作者：
Park, Bae Ho
中科院分区：
文献类型：
--
作者：
Byun, Ik-Su;Yoon, Duhee;Park, Bae Ho
由于其传输特性，单层石墨烯是应用于下一代电子器件的最有趣的材料之一。然而，石墨烯器件的实现需要合适的纳米级光刻技术以及在单层石墨烯中打开带隙的方法。纳米氢化和氧化是通过改变表面结构来打开能带隙和制造石墨烯纳米带等纳米结构的一种很有前途的方法。到目前为止，由于石墨烯的氢化需要一个复杂的过程，包括大规模的化学改性、纳米尺度的图像化和蚀刻，因此制造由氢化和氧化石墨烯组成的纳米级器件一直很困难。我们报道了石墨烯在正常大气条件下和室温下的纳米级氢化和氧化，而不需要蚀刻，湿工艺，甚至任何气体处理，通过原子力显微镜光刻控制外部偏压。微拉曼光谱测量证实了光刻上定义的纳米级氢化和氧化。有图案的氢化。氧化石墨烯表现出绝缘行为，其摩擦值比石墨烯大几倍。这些差异可用于制造基于石墨烯的电子或机电设备。
Monolayer graphene is one of the most interesting materials applicable to next-generation electronic devices due to Its transport properties. However, realization of graphene devices requires suitable nanoscale lithography as well as a method:to open a band gap in monolayer graphene. Nanoscale hydrogenation and oxidation are promising methods to open an energy band, gap by modification of surface structures and to fabricate nanostructures such as graphene nanoribbons (GNRs). Until now It has been difficult to fabricate nanoscale devices' consisting of both hydrogenated and oxidized graphene because the hydrogenation of graphene requires a complicated process composed of large-scale chemical modification, nanoscale patterning, and etching. We report on nanoscale hydrogenation and oxidation of graphene under normal atmospheric conditions and at room temperature without etching, wet process, or even any gas treatment by controlling just an external bias through atomic force Microscope lithography. Both the lithographically defined nanoscale hydrogenation and oxidation have been confirmed by micro-Raman spectroscopy measurements. Patterned hydrogenated. and oxidized graphene show insulating behaviors, and their friction values are several times larger than those of graphene. These differences can be used for fabricating electronic or electromechanical devices based on graphene.