Photoelectrical properties, energy level spectra, and photogeneration mechanisms of pentacene
Photoelectrical properties, energy level spectra, and photogeneration mechanisms of pentacene
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并五苯的光电特性、能级光谱和光生机制
DOI：
10.1002/pssa.2210250133
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发表时间：
1974
期刊：
影响因子：
--
通讯作者：
I. Bok
中科院分区：
文献类型：
--
作者：
E. Silinsh;A. Belkind;D. R. Balode;A. Biseniece;V. V. Grechov;L. F. Taure;M. Kurik;J. I. Vertzymacha;I. Bok
研究了并五苯 (Pc) 晶体薄层的主要光学、暗和光电导、光电动势和光电发射特性。结果表明，在 h = = 2.2 至 4.0 eV 光谱区域，Pc 晶体中本征光生作用占主导地位，可能通过阈值 Ec = = (2.20 ± 0.05) eV 的自电离机制进行。而在 hvv = 1.4 至 2.2 eV 光谱区域，激子光生机制，即通过三重态激子俘获空穴相互作用产生过量电荷载流子，似乎是最有可能的。测定了 Pc 晶体中性态和电离态的能级谱。 Pc晶体电离能Ic等于(5.07±0.05)eV；禁带宽度ΔE0 = (2.20 ± 0.05) eV；本征暗电导激活能 E = ΔE0/2 = (1.15 ± 0.15) eV。通过三种独立方法测定的PC晶体的电子亲和力Ac分别等于(2.87±0.10)eV、(2.70±0.15)eV或(2.73±0.2)eV。根据 SCLC 测量确定，真空蒸发薄 Pc 晶体层的准连续陷阱分布的特征能量在指数近似中为 kTc = 0.12 eV，在高斯近似中为 ± = 0.28 eV。
[忽略俄语文本]。
The main optical, dark and photoconductivity, photo-emf, and photoemission characteristics are studied for thin-layers of pentacene (Pc) crystals. It is shown that in the h = = 2.2 to 4.0 eV spectral region intrinsic photogeneration is dominant in Pc crystals, presumably proceeding via an autoionization mechanisms with a threshold value Ec = = (2.20 ± 0.05) eV. Whereas in the hvv = 1.4 to 2.2 eV spectral region an exciton photogeneration mechanism, namely, generation of excess charge carriers through triplet exciton-trapped hole interaction, seems most probably. The energy level spectra of neutral and ionized states of the Pc crystal are determined. The Pc crystal ionization energy Ic equals to (5.07 ± 0.05) eV; the forbidden energy gap ΔE0 = (2.20 ± 0.05) eV; the intrinsic dark conductivity activation energy E = ΔE0/2 = (1.15 ± 0.15) eV. The electron affinity Ac of the Pc crystal, determined by three independent methods equals to (2.87 ± 0.10) eV, (2.70 ± 0.15) eV, or (2.73 ± 0.2) eV, respectively. The characteristic energies of the quasi-continuous trap distribution for vacuum evaporated thin Pc crystals layers are kTc = 0.12 eV in an exponential approximation and ± = 0.28 eV in a Gaussian one as determined from SCLC measurements.
[Russian Text Ignored].