The effect of photoacid generator structure on deep ultraviolet resist performance
The effect of photoacid generator structure on deep ultraviolet resist performance
复制标题
光产酸剂结构对抗深紫外性能的影响
DOI：
10.1116/1.1288136
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发表时间：
2000
影响因子：
1.4
通讯作者：
W. Yueh
中科院分区：
文献类型：
--
作者：
Sheri L. Ablaza;J. Cameron;Guangyuan Xu;W. Yueh
在高、低活化能抗蚀剂体系中，研究了光酸发生器的结构对深紫外线抗蚀剂性能的影响。根据光生酸和光敏发色团的结构来考虑光酸产生器的光刻行为。首先，从酸强度和酸尺寸两个方面研究了光生酸对光刻的影响，并分别对高温和低温处理进行了优化。给出了一系列光生酸结构变化的高活化能抗蚀剂和低活化能抗蚀剂的溶解动力学、对比曲线和吸光度数据。这些研究的结果从光生酸的角度进行了讨论，强调了酸强度和尺寸对每个抗蚀剂平台的光刻性能和抗蚀剂溶解速率动力学的影响。第二，光敏光酸产生器(PAG)的结构影响。
The structural influence of photoacid generators on deep ultraviolet resist performance is investigated in both high and low activation energy resist systems. The lithographic behavior of the photoacid generator is considered in terms of the structure of the photogenerated acid and the light sensitive chromophore. First, the lithographic impact of the photogenerated acid is investigated in terms of acid strength and acid size in resists optimized for high and low temperature processing, respectively. Dissolution kinetics, contrast curve data, and absorbance data are presented for a series of high and low activation energy resists in which the structure of the photogenerated acid is systematically varied. The results of these studies are discussed in terms of the photogenerated acid, emphasizing the impact of acid strength and size on lithographic performance and resist dissolution rate kinetics for each resist platform. Second, the structural influence of the light sensitive photoacid generator (PAG) chro...