Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core-Shell Nanorods
Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core-Shell Nanorods
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DOI：
10.1021/acs.cgd.5b01438
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发表时间：
2016-04-01
影响因子：
3.8
通讯作者：
Shields, Philip A.
中科院分区：
文献类型：
--
作者：
Le Boulbar, Emmanuel D.;Edwards, Paul R.;Shields, Philip A.
控制核壳 InGaN/GaN 层的长程均匀性对于其在发光器件中的应用至关重要。本文通过高分辨率阴极发光高光谱成像测量，证明了核壳InGaN/GaN单量子阱沿m面的光发射能量变化低至7 mev.mu m(-1)。这些层通过金属有机气相外延生长在间距为 2 μm 的蚀刻 GaN 纳米棒阵列上。高分辨率透射电子显微镜和空间分辨能量色散X射线光谱测量表明，沿m面的整个1.2μm长度具有长程InN含量和厚度均匀性。尽管在 InGaN 单量子阱中观察到短程成分波动，但在 m 面上发现了这种均匀发射。 InGaN/GaN 核壳层实现这种均匀光发射的能力对于使其能够与传统平面发光器件竞争并取代传统平面发光器件至关重要。
Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as similar to 7 mev.mu m(-1) along the m-plane facets from core-shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 mu m. High-resolution transmission electron microscopy and spatially resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 mu m length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short-range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core-shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices.