Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application
Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application
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通过化学气相沉积在蓝宝石上外延生长 ZrSe2 纳米片用于光电应用
DOI：
10.1039/d1tc03339e
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发表时间：
2021
影响因子：
6.4
通讯作者：
Xingwang Zhang
中科院分区：
文献类型：
--
作者：
Yan Tian;Maoyuan Zheng;Yong Cheng;Zhigang Yin;Ji Jiang;Gaokai Wang;Jingren Chen;Xingxing Li;Jing Qi;Xingwang Zhang
首次通过CVD在蓝宝石上实现了ZrSe2层的外延生长，并且由于直接带隙跃迁，ZrSe2光电探测器在可见光区表现出稳定且可观的光响应。
For the first time the epitaxial growth of ZrSe2 layers is realized on sapphire via CVD, and the ZrSe2 photodetector exhibits a stable and appreciable photoresponse in the visible-light region due to the direct band gap transition.