SHALLOW P-TYPE SIGEC LAYERS SYNTHESIZED BY ION IMPLANTATION OF GE, C, AND B IN SI
SHALLOW P-TYPE SIGEC LAYERS SYNTHESIZED BY ION IMPLANTATION OF GE, C, AND B IN SI
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通过在 SI 中离子注入 GE、C 和 B 合成的浅 P 型 SIGEC 层
DOI：
10.1063/1.124757
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发表时间：
1999
影响因子：
4
通讯作者：
N. Yokoyama
中科院分区：
文献类型：
--
作者：
H. Kurata;Kunihiro Suzuki;T. Futatsugi;N. Yokoyama
我们研究了 p 型 SiGeC 层的特性，以使其可能应用于 100 nm 以下金属氧化物半导体场效应晶体管的源极/漏极区域。我们通过将Ge和C高剂量离子注入Si衬底并随后退火来合成SiGeC层。我们通过掺入C成功地制造了浅p+/n结，其峰值浓度超过1%。该层中的 B 扩散受到显着抑制，并且通过过程模拟再现了 B 的深度剖面，其中假设扩散系数远低于报告值。这应该归因于硅间隙的减少。我们检查了SiGeC层的薄层电阻和接触电阻，发现与SiGe层相比，电阻的增加是可以容忍的。这是因为C的掺入导致的载流子失活并不严重，这通过扩展电阻测量得到证实。电源中的结漏电...
We investigated the characteristics of p-type SiGeC layers for possible application to source/drain regions of sub-100 nm metal–oxide–semiconductor field-effect transistors. We synthesized the SiGeC layer by the high-dose ion implantation of Ge and C into Si substrate and subsequent annealing. We succeeded in fabricating shallow p+/n junctions by the incorporation of C, of which the peak concentration is more than 1%. B diffusion in this layer was significantly suppressed, and the depth profile of B was reproduced with a process simulation in which a diffusion coefficient much lower than the reported value was assumed. This should be attributed to decreased Si interstitials. We examined the sheet resistance and contact resistance of the SiGeC layer, and found that the increase in resistance is tolerable as compared with a SiGe layer. This is because the carrier deactivation by the incorporation of C was not serious, which was confirmed by the spreading resistance measurement. The junction leakage in the p...