Fundamental Efficiency Limit of Lead Iodide Perovskite Solar Cells
Fundamental Efficiency Limit of Lead Iodide Perovskite Solar Cells
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DOI：
10.1021/acs.jpclett.7b03054
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发表时间：
2018-04-05
影响因子：
5.7
通讯作者：
Yablonovitch, Eli
中科院分区：
文献类型：
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作者：
Pazos-Outon, Luis M.;Xiao, T. Patrick;Yablonovitch, Eli
卤化铅材料在观察到令人惊讶的高光伏性能之后，最近受到了来自光伏界的极大关注，其光电性能与GaAs相似。这就引出了一个问题：这些材料的效率极限是什么？已经知道，在1个太阳的照射下，晶体硅的效率极限类似于29%，尽管其带隙的肖克利-奎塞尔（SQ）极限类似于33%：差异是由于强俄歇复合。在这篇文章中，我们表明甲基铵碘化铅（MAPbI（3））同样具有比预期更大的俄歇系数。在开路条件下，俄歇非辐射复合使理论外发光效率降低到接近95%。在载流子密度较小的工作点，俄歇损失大大减少，产生了类似于90.4%的奇怪的高填充因子。这补偿了俄歇损失，并导致30.5%的功率转换效率，接近于MAPbI（3）带隙的理想值。
Lead halide materials have seen a recent surge of interest from the photovoltaics community following the observation of surprisingly high photovoltaic performance, with optoelectronic properties similar to GaAs. This begs the question: What is the limit for the efficiency of these materials? It has been known that under 1-sun illumination the efficiency limit of crystalline silicon is similar to 29%, despite the Shockley-Queisser (SQ) limit for its bandgap being similar to 33%: the discrepancy is due to strong Auger recombination. In this article, we show that methyl ammonium lead iodide (MAPbI(3)) likewise has a larger than expected Auger coefficient. Auger nonradiative recombination decreases the theoretical external luminescence efficiency to similar to 95% at open-circuit conditions. The Auger penalty is much reduced at the operating point where the carrier density is less, producing an oddly high fill factor of similar to 90.4%. This compensates the Auger penalty and leads to a power conversion efficiency of 30.5%, close to ideal for the MAPbI(3) bandgap.