Effects of magnesium doping on growth and electric conductivity of nanocrystalline cubic boron nitride thin films
Effects of magnesium doping on growth and electric conductivity of nanocrystalline cubic boron nitride thin films
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DOI：
10.1088/0022-3727/42/5/055304
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发表时间：
2009-03-07
影响因子：
3.4
通讯作者：
Yoshida, T.
中科院分区：
文献类型：
--
作者：
Kojima, K.;Nose, K.;Yoshida, T.
我们在溅射沉积过程中实现了纳米晶立方氮化硼薄膜的原位镁掺杂。通过X射线衍射、傅里叶变换红外光谱和X射线光电子能谱，澄清了小于1原子%的镁掺杂不会显著影响立方相的生长。在纯氩气中沉积的镁掺杂膜显示出比未掺杂膜高10（4）倍的电导率。虽然在大多数情况下霍尔电压不能可靠地再现，但含有2.1 at%镁的薄膜清楚地显示出p型导电，在380 K下载流子浓度和迁移率分别为4 × 10（14）cm（-3）和6 cm（2）V（-1）s（-1）。还发现，随着镁浓度的电导率的增加伴随着膜中氮的相对量的减少。
We have achieved in situ magnesium doping into nanocrystalline cubic boron nitride thin films during sputter deposition. It was clarified, through x-ray diffraction, Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy, that less than 1 at% magnesium doping does not significantly affect the growth of the cubic phase. Magnesium-doped films deposited in pure argon showed electric conductivity up to 10(4) times higher than the undoped film. Although the Hall voltage was not reproduced reliably for most of the cases, the films containing 2.1 at% magnesium clearly revealed p-type conduction with carrier concentration and mobility of 4 x 10(14) cm(-3) and 6 cm(2) V(-1) s(-1), respectively, at 380 K. It was also found that the increase in electric conductivity with magnesium concentration was accompanied by the decrease in the relative amount of nitrogen in the film.