Mapping Local Quantum Capacitance and Charged Impurities in Graphene via Plasmonic Impedance Imaging
Mapping Local Quantum Capacitance and Charged Impurities in Graphene via Plasmonic Impedance Imaging
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DOI：
10.1002/adma.201502822
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发表时间：
2015-10-28
影响因子：
29.4
通讯作者：
Tao, Nongjian
中科院分区：
文献类型：
--
作者：
Shan, Xiaonan;Chen, Shan;Tao, Nongjian
石墨烯的局部量子电容用基于等离子体的电阻抗显微镜成像，由此确定带电杂质的局部密度和极性、与带电杂质相关联的电子和空穴水坑以及杂质态的密度。
Local quantum capacitance of graphene is imaged with plasmonics- based electrical impedance microscopy, from which the local density and polarity of charged impurities, electron and hole puddles associated with the charged impurities, and the density of the impurity states are determined.