Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds
Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds
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DOI：
10.1103/physrevb.82.115449
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发表时间：
2010-09-28
影响因子：
3.7
通讯作者：
Roch, J. -F.
中科院分区：
文献类型：
--
作者：
Rondin, L.;Dantelle, G.;Roch, J. -F.
我们提出了一个单一的氮空位（NV）缺陷托管在纳米金刚石（ND）的电荷态转换的研究。我们首先表明，带负电荷的NV（-）缺陷的比例，相对于其中性对应物NV（0），随着ND的大小而减小。然后，我们提出了一个简单的模型的基础上的一层电子陷阱位于ND表面，这是在良好的协议与记录的统计。通过使用热氧化来去除ND周围的无定形碳壳，我们证明了10 nm ND中NV（-）缺陷的比例显着增加。这些结果对于进一步理解、控制和利用金刚石中带负电荷的NV缺陷的独特性质是非常宝贵的。
We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV(-) defects, with respect to its neutral counterpart NV(0), decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV(-) defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.