A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications
A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications
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DOI：
10.1109/jssc.2021.3073068
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发表时间：
2021-07-01
影响因子：
5.4
通讯作者：
Charbon, Edoardo
中科院分区：
文献类型：
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作者：
Peng, Yatao;Ruffino, Andrea;Charbon, Edoardo
报道了一种用于量子应用的低温宽带低噪声放大器(LNA)，它基于标准的40 nm CMOS工艺。LNA规范是从4.2K下读出的半导体量子比特得到的，其量子信息信号被表征为相位调制信号。为了实现宽带输入匹配阻抗和低噪声系数，利用了输入晶体管的栅漏电容。其目标是将阻性负载和电容负载引入具有源感退化的共源级的输入阻抗匹配。电容负载是由谐振频率低于工作频率的LC并联电池组产生的。所获得的非恒定带内等效电容有利于输入阻抗匹配。负载的阻性部分由共源共栅极级的跨导隐含地提供。在共源共栅晶体管的栅极上增加了一个电感来抑制其噪声，第一级的负载是一个具有两个谐振频率的基于变压器的谐振器，从而扩展了工作带宽。提出并分析了低噪声放大器低温运行的设计考虑。该低噪声放大器的增益(S-21)为35+/-0.5分贝，回波损耗为12分贝，噪声系数为0.75-1.3分贝，室温下的功耗为51.1 mW，在4.2K的4.6-8 GHz范围内，增益为42+/-3.3分贝，噪声为0.23-0.65分贝，功耗为39 mW。据我们所知，这是第一个基于工作在4 GHz以上的体块CMOS工艺的低温低噪声放大器，在室温和低温下都表现出低于1dBnF的性能。
A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals are characterized as phase-modulated signals. To achieve broadband input matching impedance and low noise figure, the gate-to-drain capacitance of the input transistor is exploited. The goal is to involve a resistive and capacitive load into the input impedance match of a common-source stage with source inductive degeneration. The capacitive load is created by an LC parallel tank whose resonant frequency is lower than the operating frequency. The achieved non-constant in-band equivalent capacitance is proven to be beneficial to input impedance matching. The resistive part of the load is provided by the transconductance of the cascode stage implicitly. An inductor is added to the gate of the cascode transistor to suppress its noise, and a transformer-based resonator with two resonant frequencies serves as the load of the first stage, thus extending the operating bandwidth. Design considerations for the cryogenic temperature operation of the LNA are proposed and analyzed. The LNA achieves a measured gain (S-21) of 35 +/- 0.5 dB, return loss > 12 dB, and NF of 0.75-1.3 dB across the band (4.1-7.9 GHz), with 51.1-mW power consumption at room temperature, while it shows a measured gain of 42 +/- 3.3 dB, and NF of 0.23-0.65 dB with 39-mW power consumption at 4.2 K between 4.6 and 8 GHz. To the best of our knowledge, this is the first report of a cryogenic LNA based on a bulk CMOS process working above 4 GHz showing sub-1-dB NF both at room and cryogenic temperatures.