Conduction mechanisms in ZnO varistors
Conduction mechanisms in ZnO varistors
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ZnO 压敏电阻的传导机制
DOI：
10.1063/1.328238
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发表时间：
1980
影响因子：
3.2
通讯作者：
J. Brugman
中科院分区：
文献类型：
--
作者：
L. K. J. Vanadamme;J. Brugman
讨论了ZnO压敏电阻器中降低势垒增强的热离子发射和齐纳隧穿现象。电容对电压、反向电流对温度和1/f噪声的测量已经在商用压敏电阻上进行。提出了一个模型，该模型的扩散电压VD与1/C2 vs V图和逆电流对1/T的热活化能相一致。经验定律β=d log V/dlog I=常数，用齐纳击穿解释。1/f电流噪声与电流的平方成正比，与反向偏置势垒的传导机制无关。
The thermionic emission enhanced by barrier lowering and the Zener tunnelling in ZnO varistors are discussed. Capacitance versus voltage, reverse current versus temperature, and 1/f noise measurements have been performed on commercial varistors. A model is proposed from which follows a diffusion voltage VD which is consistent both with the 1/C2 vs V plot and with the thermal activation energy obtained from the reverse current versus 1/T. The empirical law β=d log V/dlog I= constant, is explained by Zener breakdown. The 1/f current noise is proportional to the square of the current and independent of the conduction mechanism across reversely biased barriers.