Photoreflectance characterization of the plasma-induced damage in Si substrate
Photoreflectance characterization of the plasma-induced damage in Si substrate
复制标题
硅衬底等离子体损伤的光反射表征
DOI：
10.1063/1.1286924
复制
发表时间：
2000
影响因子：
3.2
通讯作者：
M. Okuyama
中科院分区：
文献类型：
--
作者：
H. Wada;M. Agata;K. Eriguchi;A. Fujimoto;T. Kanashima;M. Okuyama
利用光反射光谱（PRS）表征了Ar和CHF3/CF4/Ar等离子体加工过程中硅表面的损伤。在暴露于等离子体的硅衬底中，随着射频输入功率的增加，光反射（PR）信号强度急剧下降。在500℃以上退火后，用PRS证实了等离子体损伤的恢复。我们发现，等离子体处理在Si表面引起的应变可能是由于离子C、F或H的引入，而不是由于Ar离子的引入。通过分析PR信号强度的深度分布，定量地估计了Si衬底缺陷密度的深度分布。
Si surface damage induced during Ar and CHF3/CF4/Ar plasma processing has been characterized by photoreflectance spectroscopy (PRS). The photoreflectance (PR) signal intensity decreases drastically as the rf input power increases in the Si substrate exposed to the plasma. The recovery of the plasma-induced damage is confirmed by PRS after subsequent annealing over 500 °C. We found, from the shift of the PR spectra, the strain at the Si surface induced by the plasma treatment might be due to the introduction of the ions, C, F, or H, not to those of Ar. The depth profile of the defect density in the Si substrate is estimated quantitatively by analyzing the depth profile of the PR signal intensities.