The effect of substrate and external strain on electronic structures of stanene film
The effect of substrate and external strain on electronic structures of stanene film
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衬底和外部应变对锡烯薄膜电子结构的影响。
DOI：
10.1039/c5cp04322k
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发表时间：
2015
影响因子：
3.3
通讯作者：
Zhang Pinhua
中科院分区：
文献类型：
--
作者：
Wang Dongchao;Chen Li;Wang Xiaoli;Cui Guangliang;Zhang Pinhua
从第一性原理计算出发，研究了不同菌株下h-BN和AlN基质对stanene拓扑非平凡性质的影响。我们发现，在拉伸应变为6.0% ~ 9.3%的条件下，h-BN衬底上的stanene薄膜可以诱导出量子自旋霍尔相，并且声子谱证实了其稳定状态，而对于5 × 5 h-BN衬底上的stanene薄膜，量子自旋霍尔相可以在没有应变的情况下保持。然而，对于AlN衬底上的stanene，在低于10%的压缩应变或拉伸应变下无法找到量子自旋霍尔相，而对于3 × 3 AlN上的2 × 2 stanene，诱导量子自旋霍尔相所需的压缩应变仅为2%。这些理论结果将有助于理解衬底和应变对stanene的影响，并有助于进一步实现半导体衬底上stanene的量子自旋霍尔效应。
From first-principles calculations, the effects of h-BN and AlN substrates on the topological nontrivial properties of stanene are studied with different strains. We find that the quantum spin Hall phase can be induced in stanene film on a h-BN substrate under a tensile strain of between 6.0% and 9.3% with a stable state confirmed by the phonon spectrum, while for stanene on 5 × 5 h-BN, the quantum spin Hall phase can be preserved without strain. However, for stanene on a AlN substrate, the quantum spin Hall phase cannot be found under compressive or tensile strains less than 10%, while for 2 × 2 stanene on 3 × 3 AlN, the compressive strain needed to induce the quantum spin Hall phase is just 2%. These theoretical results will be helpful in understanding the effect of substrate and strain on stanene and in further realizing the quantum spin Hall effect in stanene on semiconductor substrates.