Selectively excited photoluminescence from Eu-implanted GaN
Selectively excited photoluminescence from Eu-implanted GaN
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DOI：
10.1063/1.2045551
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发表时间：
2005-09-12
影响因子：
4
通讯作者：
Briot, O
中科院分区：
文献类型：
--
作者：
Wang, K;Martin, RW;Briot, O
金属有机化学气相沉积(MOCVD)外延生长的具有10 nm厚AlN盖层的离子注入GaN，经1300℃高温退火热处理后，与Eu有关的发光强度显著增加。低温下的高分辨荧光光谱清楚地表明，D-5(0)-F-7(2)(类似于622 nm)、D-5(0)-F-7(3)(类似于664 nm)和D-5(0)-F-7(1)(类似于602 nm)跃迁的发射线都由多个峰组成。D-5(0)-F-7(2)多重态的光谱分辨组分的PL激发谱包括GaN基质的带上吸收、356 nm处的GaN激子吸收和中心位于385 nm处的宽的Subedge吸收。D-5(0)-F-7(2)多重态的形状通过连续/激子态和下禁带吸收带的选择性激发而显示出显著的差异。由于Eu3+中心不同，激发机制不同，多重态中最强的四条谱线由两对谱线组成。(C)2005年美国物理研究所。
The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 degrees C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to D-5(0)-F-7(2) (similar to 622 nm), D-5(0)-F-7(3) (similar to 664 nm), and D-5(0)-F-7(1) (similar to 602 nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the D-5(0)-F-7(2) multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356 nm, and a broad subedge absorption band centred at similar to 385 nm. Marked differences in the shape of the D-5(0)-F-7(2) PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms. (c) 2005 American Institute of Physics.