Modeling the elementary steps of low‐pressure diamond deposition
Modeling the elementary steps of low‐pressure diamond deposition
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模拟低压金刚石沉积的基本步骤
DOI：
10.1002/adma.19930050909
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发表时间：
1993
影响因子：
29.4
通讯作者：
J. Küppers
中科院分区：
文献类型：
--
作者：
J. Biener;U. Schubert;A. Schenk;B. Winter;C. Lutterloh;J. Küppers
从碳氢化合物/氢气相混合物中发现低压金刚石沉积是在20多年前，但确切的沉积机制仍不清楚。本文报道的工作证实了优先石墨侵蚀是控制速率的步骤，正如一些研究人员先前所假设的那样，并确定了沉积中的石墨成分优先被去除的反应途径。用几层厚的C:H模型系统表明脱氢、侵蚀和加氢都起作用。
Low‐pressure diamond depositionfrom hydrocarbon/hydrogen gas‐phase mixtures was discovered over 20 years ago, but the exact deposition mechanism remained unknown. Work reported here confirms preferential graphite erosion to be the rate‐controlling step, as had been assumed by some researchers earlier, and identifies reaction pathways by which the graphitic constituents of the deposit are preferentially removed. Model systems of C:H a few monolayers thick were used to show that dehydrogenation, erosion, and hydrogenation all play a part.