Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer
Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer
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DOI：
10.1063/5.0064779
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发表时间：
2021-10
影响因子：
4
通讯作者：
Ke Jiang;Xiaojuan Sun;Yuxuan Chen;Shanli Zhang;Jianwei Ben;Yang Chen;Zi-hui Zhang;Yuping Jia;Z. Shi;Dabing Li
中科院分区：
文献类型：
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作者：
Ke Jiang;Xiaojuan Sun;Yuxuan Chen;Shanli Zhang;Jianwei Ben;Yang Chen;Zi-hui Zhang;Yuping Jia;Z. Shi;Dabing Li
