Solution Transformation of Cu2O into CuInS2 for Solar Water Splitting

Solution Transformation of Cu2O into CuInS2 for Solar Water Splitting
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DOI:
10.1021/nl504746b
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发表时间:
2015-02-01
期刊:
影响因子:
10.8
通讯作者:
Graetzel, Michael
Graetzel, Michael
中科院分区:
材料科学1区
文献类型:
--
作者:
Luo, Jingshan;Tilley, S. David;Graetzel, Michael

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虽然Cu 2 O作为太阳能水分解的光电阴极表现出高性能,但其带隙太大,无法有效地用作串联配置中的底部电池。因此,铜黄铜矿最近由于其较小且可调的带隙而引起了太阳能水分解的广泛关注。然而,它们的制造主要基于真空蒸发,这是一种昂贵且耗能的工艺。在这里,我们已经开发了一种新的和低成本的解决方案的制造方法,和CuInS 2被选为模型材料,由于其较小的带隙相比,Cu 2 O和相对简单的组成。通过溶剂热处理电化学沉积的Cu 2 O薄膜,在低温下合成了晶态的纳米结构CuInS 2电极。在用Pt催化剂涂覆覆盖层和装饰之后,所制造的CuInS 2电极在模拟太阳光照下表现出3.5mA cm(2)的水裂解光电流。据我们所知,这是迄今为止报道的用于太阳能水分解的溶液处理铜黄铜矿电极的最高性能。此外,该电极显示出良好的稳定性,并且对超过800 nm的波长具有宽的入射光子-电流效率(IPCE)响应,这与该材料的较小带隙一致。
Though Cu2O has demonstrated high performance as a photocathode for solar water splitting, its band gap is too large for efficient use as the bottom cell in tandem configurations. Accordingly, copper chalcopyrites have recently attracted much attention for solar water splitting due to their smaller and tunable band gaps. However, their fabrication is mainly based on vacuum evaporation, which is an expensive and energy consuming process. Here, we have developed a novel and low-cost solution fabrication method, and CuInS2 was chosen as a model material due to its smaller band gap compared to Cu2O and relatively simple composition. The nanostructured CuInS2 electrodes were synthesized at low temperature in crystalline form by solvothermal treatment of electrochemically deposited Cu2O films. Following the coating of overlayers and decoration with Pt catalyst, the as-fabricated CuInS2 electrode demonstrated water splitting photocurrents of 3.5 mA cm(2) under simulated solar illumination. To the best of our knowledge, this is the highest performance yet reported for a solution-processed copper chalcopyrite electrode for solar water splitting. Furthermore, the electrode showed good stability and had a broad incident photon-to-current efficiency (IPCE) response to wavelengths beyond 800 nm, consistent with the smaller bandgap of this material.