Biasing voltage dependence of sensitivity of electron beam evaporated SnO2 thin film CO sensor
Biasing voltage dependence of sensitivity of electron beam evaporated SnO2 thin film CO sensor
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DOI：
10.3390/s6091153
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发表时间：
2006-09-01
期刊：
影响因子：
3.9
通讯作者：
Durrani, Sardar M. Ayub
中科院分区：
文献类型：
--
作者：
Durrani, Sardar M. Ayub
采用电子束蒸发法制备了氧化锡薄膜。研究了传感器偏置电压和薄膜厚度对氧化锡薄膜co传感性能的影响。用x射线衍射和x射线光电子能谱对薄膜进行了表征。传感器在空气中的电流-电压特性表明，半导体-金属界面形成肖特基势垒。结果表明，co传感性能与传感器偏置电压和薄膜厚度有关。当偏置电压较低时，灵敏度远高于偏置电压较高时。结果表明，薄膜对CO的敏感性随膜厚的增加而增加。
Thin films of tin oxide were deposited by electron beam evaporation. The effects of the sensor biasing voltage and film thickness on the CO-sensing of tin oxide thin films were investigated. The films were characterized using X-ray diffraction and X-ray photoelectron spectroscopy All the films were found to be amorphous. The current-voltage characteristic of the sensor in air has shown that semiconductor-metal interface forms Schottky barrier. It was found that the CO-sensing properties depend on the sensor biasing voltage and film thickness. For lower biasing voltages the sensitivity was much higher than for the higher voltages. It was found that the sensitivity of the films to CO increased with the film thickness.