Oxygen-holes creating different electronic phases in Fe4+-oxides:: successful growth of single crystalline films of SrFeO3 and related perovskites at low oxygen pressure
Oxygen-holes creating different electronic phases in Fe4+-oxides:: successful growth of single crystalline films of SrFeO3 and related perovskites at low oxygen pressure
复制标题
DOI：
10.1039/b103259n
复制
发表时间：
2001-01-01
影响因子：
--
通讯作者：
Takano, M
中科院分区：
文献类型：
--
作者：
Hayashi, N;Terashima, T;Takano, M
我们首次成功地制备了SrFeO3、CaFeO3和Sr2FeCoO6的单晶薄膜，这些钙钛矿含有Fe 4+，在只有1 kPa的低氧压下，并且通过金属SrFeO3的正霍尔系数表明氧空穴特性在输运现象中的主导地位。
We have succeeded for the first time in preparing single crystalline films of SrFeO3, CaFeO3, and Sr2FeCoO6, perovskites containing Fe4+, at low oxygen pressure of only 1 kPa, and the dominance of oxygen hole character in transport phenomena was indicated by the positive Hall coefficient of metallic SrFeO3.