The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface
The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface
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DOI：
10.1109/23.983200
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发表时间：
2001-12
影响因子：
1.8
通讯作者：
D. Sheridan;G. Chung;S. Clark;J. Cressler
中科院分区：
文献类型：
--
作者：
D. Sheridan;G. Chung;S. Clark;J. Cressler
首次研究了用于极端环境电源的高压4H-碳化硅肖特基二极管的辐射效应。二极管的制作具有很宽的势垒高度范围(1.06-1.60 eV)，并在暴露于/sup 60/Co伽马辐射源后进行评估。在几次辐射剂量后，测量了直流电流-电压特性，在总剂量为4mrad(Si)的情况下，二极管的正向或反向特性没有明显的退化。与原始器件相比，辐照后二极管的测量击穿电压增加了约200V，这归因于由MOS电容测量确定的界面负电荷的增加，并与数值击穿模拟相关联。
The effects of radiation on high-voltage 4H-SiC Schottky diodes for use in extreme environment power supplies are investigated for the first time. Diodes were fabricated with a wide range of barrier heights (1.06-1.60 eV) and were evaluated after being exposed to a /sup 60/Co gamma radiation source. DC current-voltage characteristics were measured after several radiation doses, with no observable degradation in the diode forward or reverse characteristics up to a total dose of 4 Mrad(Si). Measured breakdown voltages of post-irradiated diodes increase approximately 200 V compared to the virgin devices and are attributed to increased negative interface charge, as determined by MOS capacitor measurements and correlated with numerical breakdown simulations.