Patterning of NiFe and NiFeCo in CO/NH3 high density plasmas
Patterning of NiFe and NiFeCo in CO/NH3 high density plasmas
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CO/NH3 高密度等离子体中 NiFe 和 NiFeCo 的图案化
DOI：
10.1116/1.581615
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
S. Pearton
中科院分区：
文献类型：
--
作者：
K. B. Jung;J. Hong;Hyun Cho;S. Onishi;D. Johnson;Y. Park;J. Childress;S. Pearton
在常规反应离子刻蚀条件下工作的CO/NH3等离子体化学不刻蚀NiFe或NiFeCo。然而，在高密度等离子体条件下，只要采用优化的CO：NH_3比以及离子通量和离子能量值，两种材料的刻蚀速率都可以达到∼500A −1。刻蚀机制仍然具有很强的物理成分，似乎依赖于有足够的CO来形成羰基刻蚀产物，并避免形成碳化物样的表面层。在非优化条件下，后者可能导致净沉积而不是腐蚀。
The CO/NH3 plasma chemistry operated under conventional reactive ion etching conditions does not etch NiFe or NiFeCo. However, under high density plasma conditions, etch rates up to ∼500 A min−1 are obtained for both materials provided optimized ratios of CO:NH3 and values of ion flux and ion energy are employed. The etch mechanism still has a strong physical component and appears to depend on having sufficient CO to form carbonyl etch products, and to avoid formation of a carbide-like surface layer. Under nonoptimized conditions, the latter can lead to net deposition rather than etching.