Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire
Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire
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DOI：
10.1063/1.125503
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发表时间：
1999-12-20
影响因子：
4
通讯作者：
Look, DC
中科院分区：
文献类型：
--
作者：
Choopun, S;Vispute, RD;Look, DC
研究了脉冲激光沉积法在蓝宝石（0001）衬底上生长ZnO薄膜时，氧分压对薄膜外延、表面形貌和光电性能的影响。卢瑟福背散射和离子沟道结合原子力显微镜的结果清楚地表明，生长模式，外延程度，和缺陷密度强烈依赖于在生长过程中的氧背景压力。研究还发现，ZnO薄膜的生长方式和缺陷对薄膜的电子迁移率、自由电子浓度和发光特性有很大的影响。通过调节生长初期和生长末期的氧压，获得了具有高光学质量、高电子迁移率和低背景载流子浓度的光滑外延ZnO薄膜。这些结果对制造超晶格和控制的n-和p-型掺杂的影响进行了讨论。(C)1999年美国物理学会。[S0003-6951（99）01951-8]。
Influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has been studied in the case of ZnO thin films grown on sapphire (0001) by pulsed-laser deposition. Results of Rutherford backscattering and ion channeling in conjunction with atomic force microscopy clearly indicate that the growth mode, degree of epitaxy, and the defect density strongly depend on the oxygen background pressure during growth. It is also found that the growth mode and the defects strongly influence the electron mobility, free-electron concentration, and the luminescence properties of the ZnO films. By tuning the oxygen pressure during the initial and the final growth stages, smooth and epitaxial ZnO films with high optical quality, high electron mobility, and low background carrier concentration have been obtained. The implication of these results towards the fabrication of superlattices and controlled n- and p-type doping is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)01951-8].