High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon
High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon
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DOI：
10.1103/physrevlett.119.046802
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发表时间：
2017-07-25
影响因子：
8.6
通讯作者：
Simmons, M. Y.
中科院分区：
文献类型：
--
作者：
Broome, M. A.;Watson, T. F.;Simmons, M. Y.
在这项工作中，我们对限制在硅中精确放置的施主原子的交换耦合电子中的单重态-三重态进行直接单次读出。我们的方法利用了泡利自旋封锁 (2,0) 三重态所提供的大能量分裂，由此我们可以实现 98.4 +/- 0.2% 的单次读出保真度。我们在 2.5 T 下测得三线态负弛豫时间约为 3 s，并观察到其预测的随磁场的变化而减少，在 1 T 下达到 0.5 s。
In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision-placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4 +/- 0.2%. We measure the triplet-minus relaxation time to be of the order 3 s at 2.5 T and observe its predicted decrease as a function of magnetic field, reaching 0.5 s at 1 T.