Study of structure and polymerization of epitaxially grown SiPc(OH)2 thin films by high‐resolution electron microscopy
Study of structure and polymerization of epitaxially grown SiPc(OH)2 thin films by high‐resolution electron microscopy
复制标题
高分辨率电子显微镜研究外延生长 SiPc(OH)2 薄膜的结构和聚合
DOI：
10.1002/polb.1993.090311207
复制
发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Takashi Kobayashi
中科院分区：
文献类型：
--
作者：
N. Kawase;H. Kurata;K. Kubono;S. Isoda;Takashi Kobayashi
采用真空沉积法在云母（001）表面外延形成SiPc(OH)2 （Pc =酞菁）薄膜，然后通过热处理进行聚合。通过电子衍射和高分辨率电子显微镜测定SiPc(OH)2的分子堆积为三斜状，尺寸为a = 0.727, b = 1.307, c = 0.688 nm, α = 102.5, β = 104.2, γ = 97.4°。该单体晶体生长时，其c轴平行于基底云母的a轴，bc面平行于云母的（001）表面。通过在320℃下热处理，SiPc(OH)2聚合物的C轴与单体的C轴平行聚合。在420°C时，聚合物的C轴与单体的a*轴平行（即垂直于膜表面）。部分聚合样品的高分辨率电子显微镜显示，聚合从小单体晶体的边缘开始。这可以认为是由于聚合过程中的体积膨胀。©1993 John Wiley & Sons, Inc
Thin films of SiPc(OH)2 (Pc = phthalocyanine) were formed epitaxially on the (001) surface of mica by vacuum deposition and were then polymerized by heat treatment. The molecular packing of the SiPc(OH)2 was determined by electron diffraction and high-resolution electron microscopy as triclinic having dimensions a = 0.727, b = 1.307, c = 0.688 nm, α = 102.5, β = 104.2, and γ = 97.4°. This monomer crystal grows with its c-axis parallel to the a-axis of the substrate mica and its bc-plane parallel to the (001) surface of mica. By heat treatment at 320°C, the SiPc(OH)2 polymerized with the c-axis of the polymer parallel to the c-axis of the monomer. At 420°C, the c-axis of the polymer became parallel to the a*-axis of the monomer (i.e., perpendicular to the film surface). From high-resolution electron microscopy of partially polymerized specimens, the polymerization was shown to start at the edges of small monomer crystals. This may be considered to be due to the volume expansion during the polymerization. © 1993 John Wiley & Sons, Inc.