Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO 2 metal-oxide-semiconductor field-effect transistors
Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO 2 metal-oxide-semiconductor field-effect transistors
复制标题
超薄HfO 2 金属氧化物半导体场效应晶体管正动态应力下阈值电压不稳定特性
DOI：
10.1063/1.1805196
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发表时间：
2004
影响因子：
4
通讯作者：
Jack C. Lee
中科院分区：
文献类型：
--
作者：
S. Rhee;C. Kang;C. Kang;C. Choi;R. Choi;M. Akbar;Jack C. Lee
研究了正动态应力下HfO2金属氧化物半导体场效应晶体管的阈值电压不稳定性特性。与恒定应力相比，单极脉冲应力在更高频率和更低占空比下观察到较小的阈值电压位移。同样，在单极应力条件下，最大跨导的退化也减少了。然而，阈下摆幅的变化可以忽略不计，并且与应力频率和占空比无关。HfO2介电体中的陷阱被认为是阈值电压变化较大的主要因素。与恒电压应力下的结果相比，单极应力允许更高的10年寿命工作电压。
The characteristics of threshold voltage instability of HfO2 metal-oxide-semiconductor field-effect transistors under positive dynamic stress were investigated. Compared to constant stress, a smaller threshold voltage shift was observed at higher frequency and lower duty cycle under unipolar pulse stress. Similarly, the degradation of maximum transconductance was also reduced with unipolar stress conditions. However, the change of subthreshold swing was found to be negligible and fairly independent of stress frequencies and duty cycles. The traps in the bulk of the HfO2 dielectric are believed to be the primary factor for the larger change in threshold voltage. Compared to the result under constant voltage stress, unipolar stress allowed higher ten-year lifetime operating voltage.