Gate-tunable large negative tunnel magnetoresistance in Ni-C60-Ni single molecule transistors.
Gate-tunable large negative tunnel magnetoresistance in Ni-C60-Ni single molecule transistors.
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DOI：
10.1021/nl303871x
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发表时间：
2013-01
期刊：
影响因子：
10.8
通讯作者：
Kenji Yoshida;I. Hamada;S. Sakata;A. Umeno;M. Tsukada;K. Hirakawa
中科院分区：
文献类型：
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作者：
Kenji Yoshida;I. Hamada;S. Sakata;A. Umeno;M. Tsukada;K. Hirakawa
采用电断结法制备了含铁磁Ni引线的单C（60）分子晶体管，并对其磁输运进行了研究。实验结果表明，薄膜smt具有明显的门相关磁滞隧道磁阻（TMR）， TMR值高达-80%。在研究的整个偏置范围内，TMR的极性始终为负。密度泛函理论计算表明，Ni衬底态和C（60）分子轨道之间的杂化在费米能级附近的局部态密度中产生了反铁磁构型，这为观察到的负TMR给出了合理的解释。
We have fabricated single C(60) molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as -80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C(60) molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR.