A Deterministic-Chaos Study of Electron Triboemission Outputs
A Deterministic-Chaos Study of Electron Triboemission Outputs
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DOI：
10.1115/1.2736709
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发表时间：
2006
影响因子：
2.5
通讯作者：
G. Molina;M. Furey;C. Kajdas
中科院分区：
文献类型：
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作者：
G. Molina;M. Furey;C. Kajdas
作者进行了广泛的测量电子摩擦发射从划痕的陶瓷和半导体，本文简要概述。对典型摩擦发射计数脉冲输出的频域分布的分析表明，它们的出现不是泊松分布（例如，它不是随机的）。对摩擦发射数据的确定性混沌起源假说进行了研究。本文用确定性混沌度量方法分析了陶瓷氧化铝、蓝宝石、氮化硅和半导体Si、Ge的电子摩擦发射输出。结果表明，低能级电子发射成分可以用随机引发的倍增过程来描述，而叠加的大爆发型成分则可能是确定性起源的。
The authors have carried out extensive measurements of electron triboemission from the scratching of ceramics and semiconductors that are briefly summarized in this paper. Analysis of the frequency-domain distribution of typical triboemission count-pulse outputs suggested that their occurrence is not Poisson’s (e.g., it is not random). This paper presents a study on the hypothesis of deterministic-chaos origin for triboemission data. Electron triboemission outputs from the ceramics alumina, sapphire, silicon nitride and the semiconductors Si and Ge are analyzed by means of extracting deterministic-chaos metrics. The results suggest that the low-level electron-emission components may be described by multiplicative processes of random initiation, while the superimposed large burst-type components may be of deterministic origin.Copyright © 2006 by ASME